NSVBC123JDXV6T5G
Producentens produktnummer:

NSVBC123JDXV6T5G

Product Overview

Producent:

onsemi

Delnummer:

NSVBC123JDXV6T5G-DG

Beskrivelse:

SS SOT563 SRF MT RST XSTR
Detaljeret Beskrivelse:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Lager:

RFQ Online
12969827
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NSVBC123JDXV6T5G Tekniske specifikationer

Kategori
Bipolar (BJT), Bipolære Transistor Arrays, Forud-Biaseret
Producent
onsemi
Emballage
-
Serie
-
Produkt status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Strøm - Kollektor (Ic) (maks.)
100mA
Spænding - Kollektoremitternedbrydning (maks.)
50V
Modstand - Base (R1)
2.2kOhms
Modstand - Emitterbase (R2)
47kOhms
DC-strømforstærkning (hFE) (min.) @ ic, vce
80 @ 5mA, 10V
Vce-mætning (maks.) @ ib, ic
250mV @ 1mA, 10mA
Strøm - kollektorafbrydelse (maks.)
500nA
Frekvens - Overgang
-
Effekt - Maks.
500mW
Grad
Automotive
Kvalifikation
AEC-Q101
Monteringstype
Surface Mount
Pakke / etui
SOT-563, SOT-666
Pakke med leverandørenheder
SOT-563
Basis produktnummer
NSVBC123

Datablad og dokumenter

Datasheets
NSVBC123JDXV6T5G
HTML datablade
NSVBC123JDXV6T5G-DG

Yderligere Information

Standard pakke
8,000
Andre navne
488-NSVBC123JDXV6T5GTR

Miljø- og eksportklassificering

RoHS-status
ROHS3 Compliant
Fugtfølsomhedsniveau (MSL)
1 (Unlimited)
REACH-status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI-certificering
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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