MUN5112DW1T1G
Producentens produktnummer:

MUN5112DW1T1G

Product Overview

Producent:

onsemi

Delnummer:

MUN5112DW1T1G-DG

Beskrivelse:

TRANS PREBIAS 2PNP 50V SC88
Detaljeret Beskrivelse:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Lager:

5576 Stk Nye Originaler På Lager
12853498
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MUN5112DW1T1G Tekniske specifikationer

Kategori
Bipolar (BJT), Bipolære Transistor Arrays, Forud-Biaseret
Producent
onsemi
Emballage
Tape & Reel (TR)
Serie
-
Produkt status
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
Strøm - Kollektor (Ic) (maks.)
100mA
Spænding - Kollektoremitternedbrydning (maks.)
50V
Modstand - Base (R1)
22kOhms
Modstand - Emitterbase (R2)
22kOhms
DC-strømforstærkning (hFE) (min.) @ ic, vce
60 @ 5mA, 10V
Vce-mætning (maks.) @ ib, ic
250mV @ 300µA, 10mA
Strøm - kollektorafbrydelse (maks.)
500nA
Frekvens - Overgang
-
Effekt - Maks.
250mW
Monteringstype
Surface Mount
Pakke / etui
6-TSSOP, SC-88, SOT-363
Pakke med leverandørenheder
SC-88/SC70-6/SOT-363
Basis produktnummer
MUN5112

Datablad og dokumenter

Datablade
MUN5112DW1, NSBA124EDxx
Datasheets
MUN5112DW1T1G
HTML datablade
MUN5112DW1T1G-DG

Yderligere Information

Standard pakke
3,000
Andre navne
2156-MUN5112DW1T1G-OS
ONSONSMUN5112DW1T1G
488-MUN5112DW1T1GDKR
MUN5112DW1T1G-DG
488-MUN5112DW1T1GTR
488-MUN5112DW1T1GCT

Miljø- og eksportklassificering

RoHS-status
ROHS3 Compliant
Fugtfølsomhedsniveau (MSL)
1 (Unlimited)
REACH-status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI-certificering
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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